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아주대학교 전자공학과

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정보통신대학전자공학과반도체분야

List

김장현Kim Jang Hyun

  • 소속 지능형반도체공학과 / 반도체분야
  • 연구실원천관 407호
  • 이메일 janghyun@ajou.ac.kr
  • 내선번호2380

관심분야

  • CMOS 소자

학력

  • 2016.08 서울대학교 박사
  • 2011.08 서울대학교 석사
  • 2009.08 한국과학기술원 학사

경력

    [2016.09 ~ 2020.02] SK Hynix DRAM 개발
[2020.03 ~ 2023.02] 부경대학교 전기공학부

대표논문

  • [논문] 안도균, 김가람, 김현우, 김장현, 김상완, Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 015006-015006 (12월, 2023)
  • [논문] 김장현, 김현우, Demonstration of a Frequency Doubler Using a TunnelField-Effect Transistor with Dual Pocket Doping, Electronics, pp. 4932-4932 (12월, 2023)
  • [논문] 고민기, 김장현, 김가람, Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations, Journal of Semiconductor Technology and Science, pp. 228-235 (8월, 2023)
  • [논문] 윤채원, 김장현, 김상완, 김현우, 조성재, 조일환, 김가람, Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction, Journal of Semiconductor Technology and Science, pp. 207-214 (8월, 2023)
  • [논문] 주동열, 김장현, 김성준, Highly uniform resistive switching characteristics of Ti/TaOx/ITOmemristor devices for neuromorphic system, Journal of Alloys and Compounds, pp. 170920-170920 (6월, 2023)

연구활동

  • [논문] 민주홍, 신동호, 김장현, 김현우, Frequency doubler utilizing hetero gate dielectric tunnel field-effect transistor, PHYSICA SCRIPTA, Vol.99, No.4, pp. 1-9 (3월, 2024)
  • [논문] 안도균, 김가람, 김현우, 김장현, 김상완, Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 015006-015006 (12월, 2023)
  • [논문] 김장현, 김현우, Demonstration of a Frequency Doubler Using a TunnelField-Effect Transistor with Dual Pocket Doping, Electronics, pp. 4932-4932 (12월, 2023)
  • [논문] 윤채원, 김장현, 김상완, 김현우, 조성재, 조일환, 김가람, Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction, Journal of Semiconductor Technology and Science, pp. 207-214 (8월, 2023)
  • [논문] 고민기, 김장현, 김가람, Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations, Journal of Semiconductor Technology and Science, pp. 228-235 (8월, 2023)
  • [논문] 주동열, 김장현, 김성준, Highly uniform resistive switching characteristics of Ti/TaOx/ITOmemristor devices for neuromorphic system, Journal of Alloys and Compounds, pp. 170920-170920 (6월, 2023)
  • [논문] 김기영, 황태현, 송영서, 김장현, 김현우, Machine Learning Algorithm for Efficient Design of Separated Buffer Super-Junction IGBT, Micromachines, pp. 474-474 (1월, 2023)
  • [논문] 박동규, 김장현, 김현우, Improvement Breakdown Voltage by a Using Crown-Shaped Gate, Electronics, pp. 474-4 (1월, 2023)
  • [논문] 송영서, 김장현, 김가람, 김상완, 이종호, 최우영, Enhancement of Thermal Characteristics and On-Current in GAA MOSFET by Utilizing Al2O3-Based Dual-κ Spacer Structure, IEEE TRANSACTIONS ON ELECTRON DEVICES, pp. 343-348 (12월, 2022)
  • [논문] 송영서, 강석중, 김상완, 김가람, 김기영, 윤태영, 김장현, Reliability improvement of self-heating effect, hot-carrier injection, and on-current variation by electrical/thermal co-design, SOLID-STATE ELECTRONICS, pp. 108436-108436 (11월, 2022)
  • [논문] 김상완, 김기영, 김가람, 송영서, 김장현, Reliable High-Voltage Drain-Extended FinFET with Thermoelectric Improvement, IEEE TRANSACTIONS ON ELECTRON DEVICES, pp. 5985-5995 (10월, 2022)
  • [논문] 이강, 김상완, 김장현, 김가람, Research of Quantized Current Effect with Work Function Variation in Tunnel-field Effect Transistor, Journal of Semiconductor Technology and Science, pp. 266-274 (8월, 2022)
  • [논문] 김가람, 김상완, 김장현, Multi-colour GaN-based LEDs with trenchstructure, JAPANESE JOURNAL OF APPLIED PHYSICS, pp. 050904-050904 (5월, 2022)
  • [논문] 김현우, 김장현, 곽빈, 권대웅, Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor, IEEE TRANSACTIONS ON ELECTRON DEVICES, pp. 4046-4049 (5월, 2022)
  • [논문] 윤태영, 김장현, Application of SiGe layer for reinforcing conductivity modulation in trench insulated gate bipolar transistor, JAPANESE JOURNAL OF APPLIED PHYSICS, pp. 051001-1-051001-6 (4월, 2022)
  • [논문] 전민규, 김상완, 이강, 김장현, 김가람, Doping-less Tunnel Field-effect Transistor with a Gate Insulator Stack to Adjust Tunnel Barrier, Journal of Semiconductor Technology and Science, pp. 61-68 (4월, 2022)
  • [논문] 김현우, 김장현, 권대웅, Schottky Contact-induced Hump Phenomenon by Bias and Optical Stresses in Amorphous Oxide Thin Film Transistor, Journal of Semiconductor Technology and Science, pp. 24-29 (2월, 2022)
  • [논문] 강석중, 고승원, 김장현, 김상완, Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact, IEEE TRANSACTIONS ON ELECTRON DEVICES, pp. 910-914 (1월, 2022)
  • [논문] 김기영, 노주석, 윤태영, 김장현, Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers, Micromachines, pp. 1422-1422 (11월, 2021)
  • [논문] 송영서, 김상완, 김가람, 김현우, 이종호, 김장현, 박병국, Improvement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al2O3 for high-performance logic device and electrical/thermal co-design, JAPANESE JOURNAL OF APPLIED PHYSICS, pp. SCCE04-SCCE04 (3월, 2021)
  • [논문] 김현우, 김장현, Study on the Influence of Drain Voltage on Work Function Variation Characteristics in Tunnel Field-effect Transistor, Journal of Semiconductor Technology and Science, pp. 558-564 (12월, 2020)
  • [논문] 김장현, 송영서, 김가람, 김현민, 김상완, 박병국, Improvement in self-heating characteristic by incorporating hetero-gate-dielectric in gate-all-around MOSFETs, IEEE Journal of the Electron Devices Society, pp. 36-41 (11월, 2020)
  • [논문] 김장현, 김태찬, 김가람, 김현우, 김상완, Methodology to investigate impact of grain orientation on threshold voltage and current variability in tunneling field-effect transistors, IEEE Journal of the Electron Devices Society, pp. 1345-1349 (10월, 2020)
  • [논문] 김가람, 김장현, 김상완, Optimization of spacer and source/channel junction to improve TFET characteristics, IEICE Electronics Express, pp. 20200211-20200211 (9월, 2020)
  • [논문] 김장현, 김현우, 송영서, 김상완, 김가람, Analysis of current variation with work function variation in l-shaped tunnel-field effect transistor, Micromachines, pp. 780-780 (8월, 2020)
  • [논문] 김가람, 김장현, 김재민, 김상완, Analysis of Work-Function Variation Effects in aTunnel Field-Effect Transistor Depending on theDevice Structure, Applied Sciences-Basel, pp. 5378-5378 (8월, 2020)
  • [논문] 이승현, 박정욱, 지동우, 김가람, 김상완, 김장현, Rigorous study on hump phenomena in surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET), Applied Sciences-Basel, pp. 3596-3596 (5월, 2020)
  • [논문] 김장현, 김상완, Study on the nonlinear output characteristic of tunnel field-effect transistor, Journal of Semiconductor Technology and Science, pp. 158-162 (4월, 2020)
  • [논문] 김장현, 신성수, 이민규, 김상완, Investigation of Line-edge Roughness Effects on Electrical Characteristics of Nanowire Tunnel FETs and MOSFETs, Journal of Semiconductor Technology and Science, pp. 41-46 (2월, 2020)
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  • [저서] 김장현, Abhishek Upadhyay, Shiromani Balmukund Rahi, Shubham Tayal, 송영서, [Book Chapter] Emerging Materials Design, Characterization and Applications, (5월, 2022)

특허 및 기타

  • [특허] 김장현, 민주홍, 센스 증폭기, 이를 포함하는 메모리 장치 및 이의 동작 방법, 특허, (출원) (10-2024-0042092) (3월, 2024)