[논문]
이상훈, 권세훈, 노원태, 서승기, 이우재, 오일권, 김형준,
Role of a surface hydroxyl group depending on growth temperature in atomic layer deposition of ternary oxides
, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
, pp.062402
-062410
(Oct, 2023)
[논문]
Asir Intisar Khan, Eric Pop, H.-S. Phillip Wong, Shenjun Qin, Stacey F. Bent, 이유진, 오일권,
Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices
, ACS Applied Materials & Interfaces
, pp.43087
-43093
(Sep, 2023)
[논문]
Hayrensa Ablat, 오일권, Nathaniel E. Richey, Solomon T. Oyakhire, Wenbo Zhang, William Huang, Yi Cui, Yufei Yang, Stacey F. Bent,
Molecular Layer Deposition of Organic−Inorganic Hafnium Oxynitride Hybrid Films for Electrochemical Applications
, ACS Applied Energy Materials
, pp.5806
-5816
(May, 2023)
[논문]
김강식, 김우희, 김형준, 이유진, 이종훈, 이한보람, 이홍섭, 오일권,
Dysprosium Incorporation for Phase Stabilization of Atomic-Layer-Deposited HfO2 Thin Films
, CHEMISTRY OF MATERIALS
, pp.2312
-2320
(Mar, 2023)
[논문]
최애림, 김도희, 김세연, 류승욱, 서승기, 이우재, 오일권,
Reaction mechanism and film properties of the atomic layer deposition ofZrO2 thin films with a heteroleptic CpZr(N(CH3)2)3 precursor
, APPLIED SURFACE SCIENCE
, pp.157104
-157112
(Jan, 2023)
국제학술논문지
[논문]
이상훈, 권세훈, 노원태, 서승기, 이우재, 오일권, 김형준,
Role of a surface hydroxyl group depending on growth temperature in atomic layer deposition of ternary oxides
, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
, pp.062402
-062410
(Oct, 2023)
[논문]
Asir Intisar Khan, Eric Pop, H.-S. Phillip Wong, Shenjun Qin, Stacey F. Bent, 이유진, 오일권,
Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices
, ACS Applied Materials & Interfaces
, pp.43087
-43093
(Sep, 2023)
[논문]
Hayrensa Ablat, 오일권, Nathaniel E. Richey, Solomon T. Oyakhire, Wenbo Zhang, William Huang, Yi Cui, Yufei Yang, Stacey F. Bent,
Molecular Layer Deposition of Organic−Inorganic Hafnium Oxynitride Hybrid Films for Electrochemical Applications
, ACS Applied Energy Materials
, pp.5806
-5816
(May, 2023)
[논문]
김강식, 김우희, 김형준, 이유진, 이종훈, 이한보람, 이홍섭, 오일권,
Dysprosium Incorporation for Phase Stabilization of Atomic-Layer-Deposited HfO2 Thin Films
, CHEMISTRY OF MATERIALS
, pp.2312
-2320
(Mar, 2023)
[논문]
최애림, 김도희, 김세연, 류승욱, 서승기, 이우재, 오일권,
Reaction mechanism and film properties of the atomic layer deposition ofZrO2 thin films with a heteroleptic CpZr(N(CH3)2)3 precursor
, APPLIED SURFACE SCIENCE
, pp.157104
-157112
(Jan, 2023)
[논문]
Asir Intisar Khan, 오일권, 원병준, Christopher Perez, H-S Philip Wong, Heungdong Kwon, Kangsik Kim, Kenneth E Goodson, Krishna Saraswat, Maryann C Tung, Mehdi Asheghi, Pranav Ramesh, Xiangjin Wu, Zonghoon Lee, Eric Pop,
Unveiling the effect of superlattice interfaces and intermixing on phase change memory performance
, NANO LETTERS
, pp.6285
-6291
(Jul, 2022)
[논문]
Asir Intisar Khan, 오일권, 원병준, Christopher Perez, H.-S. Philip Wong, Kathryn M. Neilson, Kenneth E. Goodson, Krishna Saraswat, Mehdi Asheghi, Pranav Ramesh, Xiangjin Wu, 권흥동, 김강식, 이종훈, Eric Pop,
First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory withLow Reset Current Density (~3 MA/cm2) and Low Resistance Drift (~0.002 at 105ºC)
, Digest of Technical Papers - Symposium on VLSI Technology
, pp.310
-311
(Jun, 2022)
[논문]
오일권, Chi Thang Nguyen, Nathaniel E. Richey, Ralf Tonner, Stacey Bent, Tania E. Sandoval, Tzu-Ling Liu, 구본욱, 이한보람,
Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al2O3 with a Series of Al(CH3)xCl3–x and Al(CyH2y+1)3 Precursors
, Journal of the American Chemical Society
, pp.11757
-11766
(Jun, 2022)
[논문]
Josiah Yarbrough, 오일권, Daniel Grigianis, Fabian Pieck, Patrick Maue, Ralf Tonner, Stacey Bent,
Tuning Molecular Inhibitors and Aluminum Precursors for the Area-Selective Atomic Layer Deposition of Al2O3
, CHEMISTRY OF MATERIALS
, pp.4646
-4659
(May, 2022)
[논문]
이유진, 오일권, 김형준, 남태욱, 서승기, 서진형, 석장현, 선상규, 송봉근, 윤휘, 이상훈, 이현호,
Growth mechanism and electrical properties of tungsten films deposited byplasma-enhanced atomic layer deposition with chloride and metalorganic precursors
, APPLIED SURFACE SCIENCE
, pp.150939
-150945
(Aug, 2021)
[논문]
우황제, 오일권, 김미소, 김형준, 서승기, 송봉근, 윤휘, 이유진, 정승민,
Reaction Mechanisms of Non-hydrolytic Atomic Layer Deposition ofAl2O3 with a Series of Alcohol Oxidants
, JOURNAL OF PHYSICAL CHEMISTRY C
, pp.18151
-18160
(Aug, 2021)
[논문]
이우재, 오일권, Susanta Bera, 배종성, 안정원, 우현재, 권세훈,
Controllable size and crystallinity of Runanoparticles on a carbon support synthesized byfluidized bed reactor-atomic layer deposition forenhanced hydrogen oxidation activity
, JOURNAL OF MATERIALS CHEMISTRY C
, pp.17223
-17230
(Jun, 2021)
[논문]
오일권, Nathaniel E. Richey,, Stacey F. Bent, Tania E. Sandoval, Tzu-Ling Liu,,
Role of Precursor Choice on Area-Selective Atomic Layer Deposition
, CHEMISTRY OF MATERIALS
, pp.3926
-3935
(May, 2021)
[논문]
Houda Gaiji, Rizwan Khan, Sumaira Yasmeen, 문찬휘, 신상우, 윤재홍, 이한보람, 오일권,
Self-Formation of Superhydrophobic Surfaces through InterfacialEnergy Engineering between Liquids and Particles
, LANGMUIR
, pp.5356
-5363
(Apr, 2021)
[논문]
이유진, 오일권, 김현재, 김형준, 김호진, 남태욱, 서승기, 양준영, 유충근, 유혁준, 윤휘, 이청훤, 임성일, 최동욱, 최원준,
Hydrogen Barriers Based on Chemical Trapping Using ChemicallyModulated Al2O3 Grown by Atomic Layer Deposition for InGaZnOThin-Film Transistors
, ACS APPLIED MATERIALS & INTERFACES
, pp.20349
-20360
(Apr, 2021)
[논문]
Xiaoyun Yu, 오일권, Dara Semple, Richard G Closser, Stacey Bent, Tzu-Ling Liu, William Trevillyan,
Area-Selective Molecular Layer Deposition of a Silicon Oxycarbide Low-k Dielectric
, CHEMISTRY OF MATERIALS
, pp.902
-909
(Feb, 2021)
국제학술발표
[학술회의]
오일권, 김형근,
Improved Leakage Currents of ALD ZrO2 by Controlling Surface Reaction with Plasma Source
, AVS Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2022)
(Dec, 2022)
[학술회의]
이민정, 오일권, 임동현,
Study on the Reduction of Leakage Currents for Atomic Layer Deposition HfO2 Thin Films
, KISM 2022
(Nov, 2022)
[학술회의]
오일권,
Study on Area-Selective Atomic Layer Deposition of Al2O3 with a Series of Al Precursors,
, AVS 22nd International Conference on Atomic Layer Deposition (ALD 2022)
(Jun, 2022)
[학술회의]
오일권,
Selective Pattern Fabrication by AS-ALD for Semiconductor Devices
, International Union of Materials Research Societies - International Conference in Asia 2021
(Oct, 2021)
[학술회의]
오일권,
Reaction Mechanism of Area-Selective Deposition for Advanced Device Fabrication
, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
(Aug, 2021)
국내학술발표
[학술회의]
오근하, 오일권,
Bi-layered ZrO2/Y2O3 Structure for Ge-Based Devices Grown by Atomic LayerDeposition
, 반도체학술대회
(Jan, 2022)
[학술회의]
원병준, 오일권, 오근하,
The Effect of Al2O3 Passivation Layer between ZrO2/Ge Substrate Depending onAnnealing Temperature
, 반도체학술대회
(Jan, 2022)
[학술회의]
송채영, 오일권, 최애림,
Area-Selective Atomic Layer Deposition of HfO2 for RRAM Device Fabrication
, 반도체학술대회
(Jan, 2022)
[학술회의]
오일권, 황진석,
The Effect of Post-depositing Annealing on the Electrical PropertiesZrO2/Al2O3/ZrO2 Thin Films
, 반도체학술대회
(Jan, 2022)
[학술회의]
오일권,
Fundamentals of Bottom-up Fabrication of Selective Patterns forSemiconductor Devices
, 반도체학술대회
(Jan, 2022)
[학술회의]
오일권,
선택적 영역 원자층 증착법을 위한 표면반응 메커니즘: Al2O3 case 연구
, Korean Surface Engineering conference
(Jun, 2021)