[논문]
YU MENG, 강두원, 김정환, 맹군, 유덕연, 이동훈, 조중열,
ZnO Thin-Film Transistor Grown by rf Sputtering Using Carbon Dioxide and Substrate Bias Modulation
, JOURNAL OF NANOMATERIALS
, Vol.2014
, pp.1
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(Nov, 2014)
[논문]
서오권, 정재관, 조중열,
Incomplete oxidation in back channel of GaInZnO thin-film transistor grown by rf sputtering
, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
, No.1
, pp.10302
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(Apr, 2011)
[논문]
서오권, 김해미, 윤준호, 조중열,
Acceptor behavior of N2O in MOCVD-grown ZnO thin-film transistors
, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
, Vol.247
, No.7
, pp.1645
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(Jul, 2010)
[논문]
조중열, 김해미, 서오권, 윤준호, 최효식, 이병곤,
Improvement of on/off ratio in ZnO thin-film transistor by using growth interruptions during metalorganic chemical vapor deposition
, Thin Solid Films
, Vol.517
, No.10
, pp.6337
-6340
(Oct, 2009)
[논문]
최재원, 문지윤, 전원진, 조중열,
Hydrogen-assisted nitrogen incorporation in zinc oxynitride films grown by rf sputtering
, ELECTRONICS LETTERS
, Vol.7
, pp.292
-293
(Mar, 2021)
[논문]
최재원, 전원진, 강동진, 강두원, 조중열,
Hydrogen-Assisted Sputtering Growth of TiN on Ceramic Substrates
, COATINGS
, Vol.9
, No.4
, pp.255
-262
(Apr, 2019)
[논문]
김형우, 문정현, 방욱, 석오균, 조중열,
Electrical Characteristics of SiC Lateral P-i-N Diodes Fabricated on SiC Semi-Insulating Substrate
, JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY
, Vol.1
, pp.387
-392
(Jan, 2018)
[논문]
김형우, 조중열, 문정현, 방욱, 석오균,
Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer
, JAPANESE JOURNAL OF APPLIED PHYSICS
, Vol.56
, No.12
, pp.120305-1
-120305-4
(Dec, 2017)
[논문]
유덕연, 맹군, 양유정, 전원진, 김정환, 조중열,
ZnO thin-film transistor grown by rf sputtering using Zn metal target and oxidizer pulsing
, JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
, Vol.125
, No.3
, pp.112
-117
(Mar, 2017)
[논문]
강두원, 전원진, 최재원, 조중열,
Control of current distribution between parallel-connected NTC thermistors
, ELECTRONICS LETTERS
, Vol.53
, No.3
, pp.169
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(Feb, 2017)
[논문]
YU MENG, 강두원, 김정환, 맹군, 유덕연, 이동훈, 조중열,
ZnO Thin-Film Transistor Grown by rf Sputtering Using Carbon Dioxide and Substrate Bias Modulation
, JOURNAL OF NANOMATERIALS
, Vol.2014
, pp.1
-7
(Nov, 2014)
[논문]
서오권, 정재관, 조중열,
Incomplete oxidation in back channel of GaInZnO thin-film transistor grown by rf sputtering
, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
, No.1
, pp.10302
-10305
(Apr, 2011)
[논문]
서오권, 김해미, 윤준호, 조중열,
Acceptor behavior of N2O in MOCVD-grown ZnO thin-film transistors
, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
, Vol.247
, No.7
, pp.1645
-1648
(Jul, 2010)
[논문]
조중열, 김해미, 서오권, 윤준호, 최효식, 이병곤,
Improvement of on/off ratio in ZnO thin-film transistor by using growth interruptions during metalorganic chemical vapor deposition
, Thin Solid Films
, Vol.517
, No.10
, pp.6337
-6340
(Oct, 2009)
[논문]
조중열, 최효식, 강세진,
Resistance Increase in TiOx Induced by Annealing and Voltage Application
, Thin Solid Films
, Vol.516
, No.23
, pp.8693
-8696
(Oct, 2008)
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조중열, 서오권, 서현석, 정의혁, 최연익, 이병곤,
Effect of hydrogen in zinc oxide thin-film transistor grown by metal organic chemical vapor deposition
, Japanese Journal of Applied Physics
, Vol.46
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, pp.2493
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(Apr, 2007)
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조중열, F.Bradbury, Hong Chen, J.J.Heremans, V. Soghomonian,
Electron Currents in Submicron Pentacene Transistors
, TMS Letters
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(Dec, 2004)
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조중열, F. Bradbury, Hong Chen, J.J.Heremans, V. Soghomonian,
Gate tunable electron injection in submicron pentacene transistors
, Nanotechnology
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(Aug, 2004)
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조중열, 김효진, H. Suezawa, J.J. Heremans, V. Soghomonian, Y. Nishihara, 이정철,
Modification of silicon optical properties by 250 keV electron irradiation
, Japanese Journal of Applied Physics
, Vol.43
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-1240
(Apr, 2004)
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이종무, 조중열, S.J.Kim, S.M.Kang, T.J.Eom, 김현우,
Reverse recovery characteristics and defect distribution in an electron-irradiated silicon pn junction diode
, Materials Chemistry and Physics
, Vol.84
, No.3
, pp.187
-191
(Mar, 2004)
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조중열, 김효진, 이승호, Y. Nishihara, 박용주,
Reduction of turn-off time in silicon pn diodes by low energy electron irradiation
, Physica Scripta
, Vol.T101
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, pp.203
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(Nov, 2002)
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조중열, 박준, 신지연, 이준호, 이호성, Yoshiaki Nishihara,
Comparison of breakdown behavior in electron-irradiated and proton irradiated silicon pn junctions
, Japanese Journal of Applied Physics
, Vol.39
, No.7B
, pp.4660
-4662
(Jul, 2000)
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조중열, 김효진, 박준, 신지연, 이승호, 이준호, 이호성, Y.Nishihara,
Transient breakdown behavior in electron-irradiated and proton-irradiated silicon pn junctions
, American Institute of Physics
, Vol.76
, No.7
, pp.1
-3
(Feb, 2000)
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조중열, 최연익, K.L. Wang, Kevin Alt, 김동명,
Observation of Resonances by individual energy levels in InGaAs/AlAs triple barrier resonant tunneling diodes
, Japanese Journal of Applied Physics
, Vol.37
, No.3
, pp.1654
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(Mar, 1998)
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조중열, K.Alt, K.L.Wang,
Effect of doping density on capacitance of resonant tunneling diodes
, Journal of Applied Physics
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(Nov, 1997)
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조중열, K. Alt, K. L. Wang,
Observation of new type resonances in triple barrier resonant tunneling diodes
, Journal of Applied Physics
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, pp.2980
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(Sep, 1997)
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T.S.Lay, 조중열, M.Shayega, S.P.Shukl, X.Ying,
Magnetotransport of a low-disorder trople-layer electron systems in perpendicular or parallel magnetic fields
, Surface Science(SCI)
, Vol.361
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(May, 1996)
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S.Khorram, 조중열, D.Streit, K.L.Wang, T.Block,
Vertical Transport in GaAs/AlGaAs superlattices by a microwave time-of-flight technique
, Physical Review B (SCI)
, Vol.51
, No.24
(Jun, 1995)
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조중열, H.S.Li, K.L.Wang, U.W.Chen,
Observation of a large capacitive current in a double barrier resonant tunneling diaode at resonance
, Applied Physics Letters(SCI)
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, No.17
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(Apr, 1994)
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M.Fritz, 조중열, A.V.Nurmi, M.Santos, M.Shayega, W.Chen,
Interband spectroscopy of a quasi-three-dimensional elec-tron gas in wide parabolic AlGaAs quantum wells
, Physical Review B(SCI)
, Vol.48
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(Nov, 1993)
국내학술논문지
[논문]
Jun Meng, 전원진, 최재원, 조중열,
ZnO 스퍼터링에서 기판전압의 변화에 의한 성장 조절
, 반도체및디스플레이장비학회지
, Vol.16
, No.2
, pp.94
-97
(Jun, 2017)
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강두원, 조중열,
세라믹 패키지를 이용한 shunt 저항의 온도 특성 개선
, 반도체및디스플레이장비학회지
, Vol.14
, No.3
, pp.57
-60
(Sep, 2015)
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조중열, 서오권, 서현석, 정의혁, 최연익,
MOCVD로 제작된 ZnO의 성장온도에 따른 특성변화
, 반도체 및 디스플레이 장비학회
, Vol.4
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-4
(Dec, 2005)
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조중열,
Amorphization of silicon by 250 keV electron irradiation and hydrogen annealing
, KIEE International Transactions on EA
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-27
(Feb, 2005)
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이종무, 조중열, 강승모, 김계령, 김현우, 엄태종,
전자조사된 p+ -n- 접합 다이오드의 결함특성과 전기적 성질
, Journal of the Korean Vacuum Society
, Vol.13
, No.1
, pp.14
-21
(Jan, 2004)
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조중열, 김성일,
Improvement of off-state breakdown voltage in InGaAs PHEMT structure
, Journal of EEIS
, Vol.5
, No.1
, pp.37
-40
(Feb, 2000)
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조중열,
LC 공진 특성을 이용한 공명 터널링 다이오드에서의 capacitance 측정
, 전기학회 논문지
, Vol.47
, No.1
, pp.51
-55
(Jan, 1998)
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최연익, 조중열, 황규한,
소자크기가 고정된 전력 MOSFET의 최적화
, 전기학회논문지
, Vol.46
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, pp.558
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(Apr, 1997)
[학술회의]
김윤기, 조중열, 황명은,
A Small Ball Launched by AUT for Grand IT Globalization
, Cyber Security and the Needs for Experts
(Oct, 2022)
[학술회의]
최재원, 조중열, 맹군, 전원진,
Comparison of ZnO Films Grown by dc Sputtering and rf Sputtering
, International Meeting on Information Display
, pp.743
-743
(Aug, 2017)
[학술회의]
김형우, 조중열, 김남균, 문정현, 방욱, 석오균,
Effect of trench corner on breakdown characteristics of the 4H-SiC trench MOSFET
, European conference on silicon carbide and related materials
(Sep, 2016)
[학술회의]
김해미, 서오권, 조중열,
Capacitance measurements in p-type ZnO grown by MOCVD
, European Materials Research Society
(Sep, 2010)
[학술회의]
조중열, 김해미, 서오권, 윤준호,
Acceptor behavior of N2O in MOCVD-grown ZnO thin-film transistor
, E-MRS Fall Meeting
, Vol.1
, No.1
, pp.18503
-18503
(Sep, 2009)
[학술회의]
조중열, 최효식, 서오권, 이병곤,
Control of threshold voltage and on/off ratio in MOCVD grown ZnO thin-film transistor
, E-MRS Spring Meeting 2008
, Vol.2008
, No.0528
, pp.2
-2
(May, 2008)
[학술회의]
조중열, 서오권, 최효식, 이병곤,
Defect passivation by hydrogen in zinc oxide films grown by MOCVD
, International Conference on Solid State Devices and Materials
, Vol.2007
, No.1
, pp.142
-143
(Sep, 2007)
[학술회의]
조중열, 서오권, 서현석, 정의혁, 최연익, 이병곤,
Effect of hydrogen in zinc oxide thin-film transistor grown by MOCVD
, Solid State Devices and Materials
, Vol.1
, No.1
, pp.194
-195
(Sep, 2006)
[학술회의]
조중열, F. Bradbury, Hong Chen, J. J. Heremans, V. Spghomonian,
Electron injectioncurrent in submicron pentacene transistors
, Solid state devices and materials
, Vol.2005
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-977
(Sep, 2005)
[학술회의]
V. Soghomonian, 조중열, F. Bradbury, Hong Chen, J. J. Heremans,
Fa Electron currents in submicron pentacene transistors
, Electronic Materials Conference
, Vol.46
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, pp.79
-79
(Jun, 2004)
[학술회의]
조중열, 김효진, 이승호, Y. Nishihara, 박용주,
Reduction of turn-off time in silicon pn diodes by low energy electron irradiation
, Nordic Semiconlductor Meeting
, Vol.19
, No.1
, pp.56
-56
(May, 2001)
[학술회의]
조중열, 김효진, 박준, 신지연, 이승호, Y. Nishihara,
Lifetime control by low energy electron irradiation and hydrogen annealing
, Device Research Conference
, Vol.58
, pp.61
-62
(Jun, 2000)
[학술회의]
조중열, 박준, 신지연, 이준호, 이호성, Y. Nishihara,
Comparison of breakdown behavior in electron irradiated and proton irradiated silicon pn junctions
, ISSS-3
, Vol.3
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, pp.84
-84
(Nov, 1999)
[학술회의]
최연익, 김성룡, 박일용, 정상구, 조중열,
Latch-up suppressed LIGBT with an n-type ring
, Proc. EPE`97
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(Sep, 1997)
[학술회의]
조중열, 최연익, K. Alt, K.L.Wang, 김동명,
Observation of resonances by individual energy levels in InGaAs/AlAs triple barrier RTD
, Extended Abstract of 1997 SSDM
, pp.240
-241
(Sep, 1997)
국내학술발표
[학술회의]
최연익, 김해미, 윤준호, 조중열,
원통형 PN 접합의 항복전압에 대한 근사식 및 민감도
, 2008 대한전기학회 전기물성응용부문회 Techno-Fair 및 추계학술대회 논문집
, Vol.1
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, pp.179
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(Oct, 2008)
[학술회의]
조중열, 임상빈, J.J.Heremans, V. Soghomonian,
Transport properties of electron and holes in pentacene thin-film transistor
, 한국반도체학술대회
, Vol.12
, pp.249
-250
(Feb, 2005)
[학술회의]
조중열, 김성일, 김효진, Y. Nishihara, 박용주,
Lifetim control by low energy electron irradiation and hydrogen annealing
, 한국반도체 학술대회
, Vol.8
, pp.543
-544
(Feb, 2001)