교수진

  • 교수진소개
  • 명예교수 소개

교수진소개

교수정보의 상세 화면
김상완
이름
김상완
학력
박사
전공
전자공학전공(과)
정보
연구실 :
종합관 624호

연구실번호 :
2974

이메일 :
sangwan@ajou.ac.kr

연구관심분야 :
CMOS 소자, 메모리소자

홈페이지 :
https://sites.google.com/a/ajou.ac.kr/edl/
학력
졸업연도/학교/학위
2014.02 서울대학교 박사
졸업연도/학교/학위
2008.02 서울대학교 석사
졸업연도/학교/학위
2006.02 서울대학교 학사
경력 2014.08 - 2017.02 Postdoctoral Research Fellow, University of California at Berkeley 
2017.03 - 현재   아주대학교 전자공학과 조교수
연구분야 - Future low-power logic devices (FinFETs, TFETs, NCFETs, RCFETs, etc.)
- Memory device (NAND flash, RRAM, DRAM, etc.)
- Novel process technologies
- Neuromorphic system
**Device design, TCAD simulation, fabrication, characterization and theoretical analysis
기타 상시 석/박사과정 신입생, 학부 인턴학생 및 연구원을 모집합니다. 언제든지 문의 바랍니다.
논문 및 연구활동
연구활동(주요논문)
  • [논문] Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery (IEEE ELECTRON DEVICE LETTERS) - 2017.09
    김상완, Golnaz Karbasian, Sayeef Salahuddin, Ajay K. Yadav, Asif I. Khan, Chenming Hu, Korok Chatterjee, Ava J. Tan
  • [논문] Sub-lithographic patterning via tilted ion implantation for scaling beyond the 7 nm technology node (IEEE TRANSACTIONS ON ELECTRON DEVICES) - 2017.01
    김상완, Daniel Connelly, Tsu-Jae King Liu, Fei Ding, Lenonard Rubin, Peng Zheng, Kimihiko Kato
  • [논문] Hump Effects of Germanium / Silicon Heterojunction Tunnel Field-Effect Transistors (IEEE TRANSACTIONS ON ELECTRON DEVICES) - 2016.06
    최우영, 김상완
  • [논문] Demonstration of L-shaped tunnel field-effect transistors (IEEE TRANSACTIONS ON ELECTRON DEVICES) - 2016.04
    박병국, 김장현, 최우영, 김상완, Tsu-Jae King Liu
  • [논문] Design guideline of Si-based L-shaped tunneling field-effect transistors (JAPANESE JOURNAL OF APPLIED PHYSICS) - 2012.06
    박병국, 최우영, 김현우, 김상완, 선민철
국제학술논문지
  • [논문] Design optimization of double-gate isosceles trapezoid tunnel field-effect transistor (DGIT-TFET) (MICROMACHINES) - 2019.03
    김상완, 구화영
  • [논문] Double gate TFET with vertical channel sandwiched by lightly doped Si (IEEE TRANSACTIONS ON ELECTRON DEVICES) - 2019.02
    김상완, 박병국, 김장현
  • [논문] Fabrication methods for nanowire tunnel FET with locally concentrated silicon-germanium channel (JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE) - 2019.02
    김상완, 이륭빈, 박병국, 박의환, 김현민, 이기태, 이준일, 김시현
  • [논문] High on-current Ge-channel heterojunction tunnel field-effect transistor using direct band-to-band tunneling (MICROMACHINES) - 2019.01
    김상완, 이재홍, 김장현, 김가람
  • [논문] Demonstration of fin-tunnel field-effect transistor with elevated drain (MICROMACHINES) - 2019.01
    김상완, 박병국, 김가람, 김장현, 김현우
  • [논문] Compact potential model for Si1-xGex/Si heterojunction double-gate tunnel field-effect transistors (TFET) (JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY) - 2018.09
    김상완, 최우영
  • [논문] A 1T dynamic random access memory cell based on gated thyristor with surrounding gate structure for high scalability (JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY) - 2018.09
    박병국, 김형진, 김현민, 이기태, 김상완, 김시현
  • [논문] Volatile and nonvolatile characteristics of asymmetric dual-gate thyristor RAM fabricated vertically with polycrystalline silicon (JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY) - 2018.09
    박병국, 김현민, 권대웅, 김시현, 이준일, 박의환, 이륭빈, 김형진, 김상완, 이기태
  • [논문] Analysis of current drift on p-channel pH-sensitive SiNW ISFET by capacitance measurement (CURRENT APPLIED PHYSICS) - 2018.08
    박병국, 김시현, 김대환, 이륭빈, 김태현, 모현선, 김상완, 권대웅
  • [논문] High-performance recessed-channel reconfigurable field-effect transistor using Si-Ge heterojunction (JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE) - 2018.06
    김상완, 김상욱
  • [논문] Vertical-structured electron-hole bilayer tunnel field-effect transistor for extremely low-power operation with high scalability (IEEE TRANSACTIONS ON ELECTRON DEVICES) - 2018.04
    김상완, 박병국, 최우영
  • [논문] Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3-Dimensional NAND Flash Memory (IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY) - 2018.02
    박병국, 권대웅, 이준일, 이륭빈, 이종호, 김상완, 김시현
  • [논문] A nitrided interfacial oxide for interface state improvement in hafnium zirconium oxide-based ferroelectric transistor technology (IEEE ELECTRON DEVICE LETTERS) - 2018.01
    Sayeef Salahuddin, Ava J. Tan, Ajay K. Yadav, Daewoong Kwon, Chenming Hu, 김상완, Korok Chatterjee
  • [논문] Nanowire size dependence on sensitivity of silicon nanowire field-effect transistor-based pH sensor (JAPANESE JOURNAL OF APPLIED PHYSICS) - 2017.11
    김상완, 이륭빈, 권대웅, 박병국, 모현선, 김대환, 김시현
  • [논문] Reconfigurable U-shaped tunnel field-effect transistor (IEICE TRANSACTIONS ON ELECTRONICS) - 2017.10
    김상완, 김윤, 최현석, 위대훈, 이원주, 권휘태
  • [논문] Switching characteristic analysis of tunnel field-effect transistor (TFET) inverters (JORNAL OF NANOSCIENCE AND NANOTECHNOLOGY) - 2017.10
    김상완, 권대웅, 박병국, 박의환, 이준일, 김장현
  • [논문] Selective Thermochemical Growth of Hierarchical ZnO Nanowire Branches on Silver Nanowire Backbone Percolation Network Heaters (JOURNAL OF PHYSICAL CHEMISTRY C) - 2017.09
    김상완, Habeom Lee, Junyeob Yeo, Jinhwan Lee, Seung Hwan Ko, Jinhyeong Kwon, 한승용, Sukjoon Hong, Hyunmin Cho
  • [논문] Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery (IEEE ELECTRON DEVICE LETTERS) - 2017.09
    김상완, Golnaz Karbasian, Sayeef Salahuddin, Ajay K. Yadav, Asif I. Khan, Chenming Hu, Korok Chatterjee, Ava J. Tan
  • [논문] Improved compact model for double-gate tunnel field-effect transistors by the rigorous consideration of gate fringing field (JAPANESE JOURNAL OF APPLIED PHYSICS) - 2017.07
    김상완, 최우영
  • [논문] Effects of Localized Body Doping on Switching Characteristics of Tunnel FET Inverters With Vertical Structures (IEEE TRANSACTIONS ON ELECTRON DEVICES) - 2017.04
    김상완, 권대웅, 김현우, 김장현, 박병국, 이준일, 김완동, 이종호, 박의환
  • [논문] Sub-lithographic patterning via tilted ion implantation for scaling beyond the 7 nm technology node (IEEE TRANSACTIONS ON ELECTRON DEVICES) - 2017.01
    김상완, Daniel Connelly, Tsu-Jae King Liu, Fei Ding, Lenonard Rubin, Peng Zheng, Kimihiko Kato
  • [논문] A recessed-channel tunnel field-effect transistor (RTFET) with the asymmetric source and drain (JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE) - 2016.10
    김윤, 권희태, 위대훈, 김상완, 이원주
  • [논문] Recessed-channel reconfigurable field-effect Transistor (ELECTRONICS LETTERS) - 2016.09
    김상완, 김상욱
  • [논문] Tilted ion implantation as a cost-efficient sublithographic patterning technique (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures) - 2016.07
    김상완, Tsu-Jae King Liu, Leonard Rubin, Peng Zheng, Kimihiko Kato
  • [논문] Hump Effects of Germanium / Silicon Heterojunction Tunnel Field-Effect Transistors (IEEE TRANSACTIONS ON ELECTRON DEVICES) - 2016.06
    최우영, 김상완
  • [논문] Improvement of current drivability in high-scalable tunnel field-effect transistors with CMOS compatible self-aligned process (ELECTRONICS LETTERS) - 2016.06
    박병국, 선민철, 김장현, 권대웅, 김상완, 박의환
  • [논문] Analysis on trapping kinetics of stress-induced trapped holes in gate dielectric of HfInZnO amorphous oxide TFT (IEEE TRANSACTIONS ON ELECTRON DEVICES) - 2016.06
    박병국, 권대웅, 김완동, 이종호, 김상완, 김장현
  • [논문] Demonstration of L-shaped tunnel field-effect transistors (IEEE TRANSACTIONS ON ELECTRON DEVICES) - 2016.04
    박병국, 김장현, 최우영, 김상완, Tsu-Jae King Liu
  • [논문] Vertical type double gate tunneling FET with thin tunnel barrier (ELECTRONICS LETTERS) - 2015.04
    박병국, 김현우, 김상완, 김장현
국제학술발표
  • [학술회의] Channel thickness and interfacial trap variation induced by selective-channel-etching in stacked gate-all-around MOSFETs having multi-channel-width (International Microprocesses and Nanotechnology Conference (MNC)) - 2018.11
    박병국, 김시현, 이기태, 김소연, 김수현, 김상완, 김문현
  • [학술회의] L-shaped TFET with stacked-gates to suppress the corner effect (International Microprocesses and Nanotechnology Conference (MNC)) - 2018.11
    김상완, 김장현, 신성수
  • [학술회의] Ultra-low leakage technology for sub 10nm FinFET and GAAFET by optimized anti punch-through implantation (International Microprocesses and Nanotechnology Conference (MNC)) - 2018.11
    박병국, 김소연, 이기태, 김시현, 이준일, 김상완, Y. Yasuda-Masuoka, 이륭빈, 김수현, 김문현
  • [학술회의] Variation effect of Ge concentration in SiGe channel of vertically-stacked tunnel field-effect transistor (TFET) (International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC)) - 2018.07
    박병국, 이륭빈, 김시현, 박의환, 김상완, 이준일
  • [학술회의] Drive current boosting method of Fin-structure tunnel field-effect transistor with locally concentrated silicon-germanium channel (Silicon Nanoelectronics Workshop (SNW)) - 2018.06
    박병국, 이준일, 이륭빈, 박의환, 김현민, 이기태, 김소연, 이종호, 김상완, 김시현
  • [학술회의] Cost-efficient sub-lithographic patterning with tilted-ion implantation (TII) (International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)) - 2018.04
    김상완, Tsu-Jae King Liu, Leonard Rubin, Peng Zheng, Kimihiko Kato
  • [학술회의] Device and Process Technologies for Extending Moore’s Law (China Semiconductor Technology International Conference (CSTIC) 2018) - 2018.03
    김상완, Kimihiko Kato, Tsu-Jae King Liu, 신성수, 구화영, 김신희, Peng Zheng, Leonard Rubin
  • [학술회의] Simulation study on influence of interface trap position in Si1-xGex gate-all-around (GAA) field-effect transistor (International Conference on Electronics, Information and Communication (ICEIC)) - 2018.01
    박병국, 이륭빈, 김수현, 김시현, 박의환, 김현민, 이기태, 김상완, 이준일
  • [학술회의] Sub-lithographic Patterning by Tilted Ion Implantation (TII) (Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)) - 2017.07
    김상완, Tsu-Jae King Liu, Leonard Rubin, Peng Zheng, Kimihiko Kato
  • [학술회의] Temperature Dependence of Recessed-Channel Reconfigurable Field-Effect Transistor (RC-RFET) (Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)) - 2017.07
    김상완, 권대웅, 김상욱
  • [학술회의] There’s still plenty of room at the bottom ? and at the top (75th Device Research Conference (DRC)) - 2017.06
    김상완, Tsu-Jae King Liu, Vladimir Stojanovic, Kimihiko Kato, Peng Zheng
  • [학술회의] Ferroelectricity in HfO2 thin films as a function of Zr doping (International Symposium on VLSI Technology, Systems and Applications (2017 VLSI-TSA)) - 2017.04
    Golnaz Karbasian, Ava Tan, Ajay Yadav, Sayeef Salahuddin, Claudy Rayan Serrao, Asif Islam Khan, Korok Chatterjee, Chenming Hu, 김상완, Eric Martin Henry Sorensen
국내학술발표
  • [학술회의] Improvement of reliability and performance in stacked nanowire tunnel field-effect transistor (TFET) using silicon germanium (한국반도체학술대회) - 2019.02
    김상완, 임경진, 김장현, 박정욱
  • [학술회의] Surrounding channel nanowire tunnel field-effect transistor (SCNW-TFET) with dual-gate to reduce a hump phenomenon (한국반도체학술대회) - 2019.02
    김상완, 권예성, 김장현, 이승현
  • [학술회의] Comparison of work function variation between fin and nanowire tunnel field-effect transistors (TFETs) (한국반도체학술대회) - 2019.02
    김상완, 김신희, 김장현, 김태찬
  • [학술회의] Proposal of I-shaped SiGe fin tunnel field-effect transistor (TFET) (한국반도체학술대회) - 2019.02
    박병국, 이륭빈, 이준일, 김소연, 김시현, 김상완, 이기태
  • [학술회의] Random dopant fluctuation (RDF) effects in nanowire tunnel field-effect transistors (TFETs) (한국반도체학술대회) - 2019.02
    김상완, 구화영, 김장현, 황진욱
  • [학술회의] Investigation on line-edge roughness (LER) effects between nanowire tunnel FETs (TFETs) and MOSFETs (한국반도체학술대회) - 2019.02
    김상완, 신성수, 김장현, 이민규
  • [학술회의] Demonstration of Ge condensed SiGe channel tunnel FETs and co-integration with CMOS (한국반도체학술대회) - 2019.02
    박병국, 이준일, 이륭빈, 김시현, 이기태, 김소연, 김문현, 최윤호, 김상완, 김현민
  • [학술회의] Effective work function modulation using dipole mechanism with Al2O3 on HfO2 atomic layer deposition (한국반도체학술대회) - 2019.02
    박병국, 김문현, 김시현, 이기태, 이준일, 김현민, 이륭빈, 김상완, 김소연
  • [학술회의] Simulation study on the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FET (한국반도체학술대회) - 2019.02
    박병국, 최윤호, 이기태, 김경연, 이준일, 이륭빈, 김현민, 송영서, 김상완, 김시현
  • [학술회의] Nonvolatile memory (NVM) operation of tunnel field-effect transistor (TFETs) using doped-HfO2 sidewall (NANO Korea 2018) - 2018.07
    박병국, 이륭빈, 김시현, 권대웅, 김상완, 이기태
  • [학술회의] Transient analysis of tunnel field-effect transistor with raised drain (NANO Korea 2018) - 2018.07
    김상완, 김장현, 신성수
  • [학술회의] Ultra-low power device technologies for energy efficient computing system (하계종합학술대회) - 2018.06
    김상완
  • [학술회의] TMAH를 이용한 채널 방향에 따른 실리콘 식각 특성 분석 (하계종합학술대회) - 2018.06
    박병국, 이기태, 김시현, 김문현, 김상완, 이준일
  • [학술회의] 적층된 Nanosheet 형태의 Gate-All-Around Field-Effect Transistor의 동작 최적화를 위한 PMOS 구조 (하계종합학술대회) - 2018.06
    박병국, 김문현, 김시현, 김상완, 이기태
  • [학술회의] 시뮬레이션을 통한 게이트-소스/드레인 간 Overlap 길이에 따른 GAA FET의 Extension 저항 추출 및 분석 (하계종합학술대회) - 2018.06
    박병국, 김시현, 고형우, 김상완, 김수현
  • [학술회의] Double-gate isosceles trapezoid tunnel field-effect transistor (DGIT-TFET) to suppress ambipolar current (한국반도체학술대회) - 2018.02
    김상완, 구화영
  • [학술회의] Simulation study on the effect of unconformal work-function metal deposition on the electrical characteristic of stacked-GAA MOSFET (한국반도체학술대회) - 2018.02
    박병국, 김시현, 김수현, 박의환, 이준일, 김소연, 김현민, 이기태, 이종호, 김상완, 이륭빈
  • [학술회의] Tunnel field effect transistor with ferroelectric gate dielectric (한국반도체학술대회) - 2018.02
    박병국, 이기태, 이준일, 박의환, 김시현, 김현민, 김상완, 이륭빈
  • [학술회의] Drive current boosting method of tunnel FET with locally concentrated silicon-germanium channel near surface (한국반도체학술대회) - 2018.02
    박병국, 이준일, 이륭빈, 박의환, 김현민, 이기태, 김소연, 김상완, 김시현
  • [학술회의] Nanowire tunnel field-effect transistor (TFET) with ultra-thin-tunnel region for high current drivability and low subthreshold swing (한국반도체학술대회) - 2018.02
    김상완, 이승현, 박정욱
  • [학술회의] Highly CMOS compatible strategies for extending Moore’s Law (한국반도체학술대회 (KCS)) - 2018.02
    김상완, 구화영, 김신희, 신성수
  • [학술회의] Enhanced compact model for Ge-Si heterojunction double-gate tunnel field-effect transistors (TFETs) (NANO Korea 2017 Symposium) - 2017.07
    김상완, 최우영
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